Physical Review B

dc conductivity, optical absorption, and photoconductivity of amorphous arsenic telluride films

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Conductivity, optical absorption, and photoconductivity experiments on amorphous As2Te3 films are described. The films were prepared by condensation of the vapor on a cooled substrate. Over the temperature range from about 200 to 400°K, the conductivity is of the form σ=σ0e-ΔEkT, with σ0=600 Ω-1 cm-1 and ΔE=0.4 eV. This result is interpreted in terms of a "conductivity gap" of 0.8 eV. An analysis of the preexponental factor yields an average mobility between about 0.3 and 5 cm2/V sec, suggesting that the "mobility edges" which are responsible for the conductivity gap are on the borderline between localized and delocalized states. An "optical gap" is derived from a treatment of the optical-absorption data which suggests that for energies well above the conductivity gap the density of valence and conduction-band states have a parabolic dependence on energy. The optical gap of 0.95-0.98 eV is the energy difference between the edges of these parabolic states. Photoconductivity measurements indicate that the room-temperature life-time is less than 50 nsec. These measurements provide an estimate of 0.3 cm2/V sec for the lower limit of the mobility of carriers. The photoconductivity data also show the presence of trapping states. © 1970 The American Physical Society.


15 Jan 1970


Physical Review B