Robert W. Keyes
Physical Review B
Mixed SixGe1-x amorphous thin films have been recrystallized by laser annealing and studied by Raman scattering. The results have been correlated with the results obtained by thermal annealing and characterized by X-ray diffraction. The recrystallization process is explained by assuming that clusters of Si (Ge) tend to form when the material is illuminated, as a result of the difference in binding energy between Si-Si and Ge-Ge. © 1993.
Robert W. Keyes
Physical Review B
Ming L. Yu
Physical Review B
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
M.A. Lutz, R.M. Feenstra, et al.
Surface Science