J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Mixed SixGe1-x amorphous thin films have been recrystallized by laser annealing and studied by Raman scattering. The results have been correlated with the results obtained by thermal annealing and characterized by X-ray diffraction. The recrystallization process is explained by assuming that clusters of Si (Ge) tend to form when the material is illuminated, as a result of the difference in binding energy between Si-Si and Ge-Ge. © 1993.
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Kigook Song, Robert D. Miller, et al.
Macromolecules
T.N. Morgan
Semiconductor Science and Technology
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011