A. Reisman, M. Berkenblit, et al.
JES
Mixed SixGe1-x amorphous thin films have been recrystallized by laser annealing and studied by Raman scattering. The results have been correlated with the results obtained by thermal annealing and characterized by X-ray diffraction. The recrystallization process is explained by assuming that clusters of Si (Ge) tend to form when the material is illuminated, as a result of the difference in binding energy between Si-Si and Ge-Ge. © 1993.
A. Reisman, M. Berkenblit, et al.
JES
A. Gangulee, F.M. D'Heurle
Thin Solid Films
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997