J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Mixed SixGe1-x amorphous thin films have been recrystallized by laser annealing and studied by Raman scattering. The results have been correlated with the results obtained by thermal annealing and characterized by X-ray diffraction. The recrystallization process is explained by assuming that clusters of Si (Ge) tend to form when the material is illuminated, as a result of the difference in binding energy between Si-Si and Ge-Ge. © 1993.
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
J.C. Marinace
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007