Applied Surface Science

Crystallization process of amorphous mixed SixGe1-x thin films

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Mixed SixGe1-x amorphous thin films have been recrystallized by laser annealing and studied by Raman scattering. The results have been correlated with the results obtained by thermal annealing and characterized by X-ray diffraction. The recrystallization process is explained by assuming that clusters of Si (Ge) tend to form when the material is illuminated, as a result of the difference in binding energy between Si-Si and Ge-Ge. © 1993.