The effect of argon ion bombardment on the structure and properties of thick copper films was studied. Primary deposition variables were ion flux, ion energy, substrate temperature, and substrate type. The effects of ion bombardment are profoundly different at high energy (600 eV) as opposed to low energy (62 eV). Trends in crystallographic texture, microhardness, crystallite size, and resistivity are significantly different at different ion energies on all substrates examined. At high energy, the substrate dependence of properties is small while a large dependence is seen at lower energy. This work demonstrates the independence of ion energy and ion flux as control parameters in property modification using ion-assisted deposition processes. © 1988, American Vacuum Society. All rights reserved.