Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements

Abstract

Conventional 1D single level transmission line model (TLM) to extract silicide-silicon contact resistivity does not take into account silicide sheet resistance. In this paper, 1D dual level TLM model approximation is used for extraction of the silicide sheet resistance and silicide-silicon contact resistivity. Experiments involving Platinum content increase in Nickel Silicide and pre-silicide Carbon implant in Silicon Germanium (SiGe) PMOS is analyzed using our model. © 2012 SPIE.