Calculation of temperature effects on the equilibrium crystal shape of Si near (100)

Abstract

We present a statistical model of step meandering on small-miscut vicinal Si(100) surfaces, generalized to treat arbitrary azimuth. The model is solved using a transfer-matrix technique and the free energy of the vicinal Si(100) surface is calculated. From the free energy the equilibrium crystal shape is derived at various temperatures. The results are compared with existing experimental data. © 1994 The American Physical Society.