Bonding and electronic structure of the GaAs(1 1 0)-Al interface

Abstract

The electronic structure of the GaAs(110)-Al interface is studied by using the ordered metal layer and metal droplet models simulating the low and high coverage states. It is found that the character of the Fermi level pinning states depends on the level of metal coverage. Upon the formation of the metal cluster, the metal-semiconductor interactions weaken and become nondirectional. © 1984.