Mark W. Dowley
Solid State Communications
Using a 50 mW HeNe infrared laser as the light source and a micro channel-plate image intensifier/converter, grown-in dislocations were observed in 2 to 3 mm thick silicon (111) slices. All the dislocations imaged followed the visibility criteria set by Tanner and Fathers (1974) for pure edge dislocations. © 1979 Taylor & Francis Group, LLC.
Mark W. Dowley
Solid State Communications
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
J.A. Barker, D. Henderson, et al.
Molecular Physics
P. Alnot, D.J. Auerbach, et al.
Surface Science