Birefringence images of arbitrarily oriented dislocation lines in (111) silicon wafers

Abstract

Using a 50 mW HeNe infrared laser as the light source and a micro channel-plate image intensifier/converter, grown-in dislocations were observed in 2 to 3 mm thick silicon (111) slices. All the dislocations imaged followed the visibility criteria set by Tanner and Fathers (1974) for pure edge dislocations. © 1979 Taylor & Francis Group, LLC.