IEEE Transactions on Electron Devices

Band-edge high-performance metal-gate/high-κ nMOSFET using Hf-Si/HfO 2 stack

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A record high electron mobility (248 cm 2/V . s at E eff of 1 MV/cm) was obtained at T inv of 1.47 nm, with a bandedge effective work function, by a Hf-Si/HfO 2 stack using gatelast process, resulting in I ON of 1178 μA/μm (I OFF of 100 nA/ μm) at V dd of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology. © 2009 IEEE.