Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Ballistic electron emission spectroscopy (BEES), a technique based on the scanning tunneling microscope (STM), was used to measure Schottky barrier heights of metals on cleaved n-type GaP(110). The threshold voltages V for current detection in the semiconductor were found to be uniform to within ±0.02 V over the sample surface for any given metal on GaP. A transport model for the current I crossing the barrier, that includes both nonclassical transmission across the metal-semiconductor interface and electron scattering in the metal, yields I ∝ (V -V)5/2 near threshold. The value of V extracted from the data, which represents the Schottky barrier height, depends somewhat on the details of the transport model. Our best estimates of the Schottky barrier heights, within ±0.03 eV, are 1.07 (Mg), 1.11 (Ni), 1.14 (Bi), 1.25 (Cu), 1.31 (Ag), and 1.46 eV (Au).
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
T.N. Morgan
Semiconductor Science and Technology
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano