High resolution EELS in the IBM sub-angstrom STEM
P.E. Batson
M&M 2006
An experimental method for obtaining conduction band electronic structure from the silicon L2,3 absorption edge is reviewed. The method uses Spatially Resolved Electron Energy Loss Spectroscopy in conjunction with a field emission Scanning Transmission Electron Microscope. The best spectroscopic resolution obtained is 160 meV with an energy scale accuracy of ±20 meV using 120keV electrons. The spectroscopy is combined with High Angle Annular Dark Field imaging with a 0.2-nm diameter probe to obtain nearly atomic resolution point spectroscopic analyses. Atomic bonding at a Si/SiO2 interface, conduction bandstructure in the relaxed GexSi1-x alloy system and conduction band offsets in nanometer thick strained quantum wells have been obtained. Future work aims at relating defect electronic structure with directly obtained electronic structure.
P.E. Batson
M&M 2006
T.M. Shaw, D. Dimos, et al.
Journal of Materials Research
C.Y. Wong, C.R.M. Grovenor, et al.
Journal of Applied Physics
P.E. Batson, J.M. Gibson, et al.
Journal of Non-Crystalline Solids