I. Ohdomari, M. Akiyama, et al.
Journal of Applied Physics
It was found that the increase in room-temperature resistivity caused by ion bombardment damage in YBa2Cu3O7-x could be completely recovered by annealing if the damage dose was small. A small resistivity increment (~ 0.2%), caused by a very small ion dose, annealed at room temperature. For a larger ion dose, sufficient to double the resistivity, complete recovery of room-temperature resistivity was produced by annealing at 500 °C in O2, but recovery after still larger doses was incomplete. © 1989.
I. Ohdomari, M. Akiyama, et al.
Journal of Applied Physics
O. Bisi, K.N. Tu
Physical Review Letters
G.J. Clark, F. Legoues, et al.
Applied Physics Letters
M. Wittmer, K.N. Tu
Physical Review B