Nuclear Inst. and Methods in Physics Research, B

Annealing of ion implant damage in the high-temperature superconductor YBa2Cu3O7-x

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It was found that the increase in room-temperature resistivity caused by ion bombardment damage in YBa2Cu3O7-x could be completely recovered by annealing if the damage dose was small. A small resistivity increment (~ 0.2%), caused by a very small ion dose, annealed at room temperature. For a larger ion dose, sufficient to double the resistivity, complete recovery of room-temperature resistivity was produced by annealing at 500 °C in O2, but recovery after still larger doses was incomplete. © 1989.