A thin film resistor for Josephson tunneling circuits

Abstract

Thin films of the intermetallic compound AuIn2 have been used to form resistors in Josephson tunneling circuits employing Pb alloy tunneling junction electrodes and interconnection lines. Described in this paper is a study of such resistors. The resistors were fabricated through the use of AuIn2 films approximately 2900 Å thick. Their resistivity at 4.2 K was calculated to be about 1.3 μohm cm, which seems to be attributable to a temperature-independent contribution from defect scattering. Annealing at a temperature of 75°C for 10 h resulted in a decrease of their resistance by only about 3%. Additionally, no change was observed in the resistance of resistors which were in contact with interconnection lines which were formed from Pb-In-Au thin films containing 8 wt.% In and 4 wt.% Au. This is in accord with a previous finding that AuIn2 and Pb-In solid solution phases coexist at room temperature in thermodynamic equilibrium in such Pb-In-Au films. © 1977.