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Paper
A SIMS-XPS study on silicon and germanium under O+2 bombardment
Abstract
Using a combined SIMS-XPS system it is shown that the much lower secondary ion yield of Ge+ sputtered from germanium under 10 keV O+2 bombardment at normal incidence compared to the Si+ yield sputtered from silicon is due to the much smaller uptake of oxygen in germanium vs silicon. Data are also presented on the chemistry induced in b oth elements as a function of the angle of incidence of the O+2 beam. © 1986.