Journal of Materials Science: Materials in Electronics

A multi-technique study of the surface preparation of InSb substrate and subsequently grown CdTe films by molecular beam epitaxy

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Surface preparation and ion bombardment cleaning of (001) InSb substrates prior to molecular beam epitaxy (MBE) of CdTe films were studied by the combination of various characterization techniques, including X-ray double crystal rocking curves, photoluminescence, Raman scattering and scanning electron microscopy, for different ion bombardment conditions. The optimum substrate preparation conditions of ion bombardment cleaning time and temperature were obtained. The effects of ion beam cleaning on the quality of subsequent MBE CdTe films and the significant divergence among the different assessments are discussed. © 1996 Chapman & Hall.