I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
The preparation of solid solution perovskite 70% Pb(Fe 1 2Nb 1 2)O3-30%Pb(Fe 2 3W 1 3)O3 is described for use as a thick film capacitor on ceramic chip carriers. The limited densification at the temperature range of interest (850 - 900°C) requires the addition of a sintering aid. It is shown that a small addition of PbO(7 vol.%) is sufficient to promote densification of this material and maintain a dielectric constant exceeding 4000 for a fired thick film. Other electrical and physical properties of this material are described. © 1984.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Imran Nasim, Melanie Weber
SCML 2024
R. Ghez, M.B. Small
JES