A high performance low temperature 0.3 μm CMOS on SIMOX

Abstract

Ultra-thin SOI film is used in fabrication of a 0.3 juin CMOS,optimized for low temperature operation. It is demonstrated that by utilizing ultra-thin SOI, it is possible to achieve low threshold at relatively high channel doping, neccssary for reduction of short channel cffccts. Very high performance loaded NAND inverters (with delays less than 100 psec at 2 volts) arc demonstrated.