A 1.2 ns/1 ns 1 K∗16 ECL dual-port cache RAM
Hyun J. Shin, P.F. Lu, et al.
ISSCC 1993
We describe a 640-ps read access, 16-word by 64-b, three-port register file fabricated in 0.25-μm effective channel length CMOS technology. It features the capability to perform a write followed by a read in the same cycle at frequencies above 500 MHz. High speed is achieved by using a novel cell and array structure. Static circuit design is used exclusively throughout the entire register file and is optimized for high-speed operation. Measured results of the same-cycle read-after-write demonstrate register file operations at 625 MHz. Additionally, internal probe measurements of the read access path components are presented and compared with circuit simulations.
Hyun J. Shin, P.F. Lu, et al.
ISSCC 1993
Hyun J. Shin, Chih-Liang Chen, et al.
Bipolar Circuits and Technology Meeting 1989
W.H. Henkels, N.C.-C. Lu, et al.
VLSI Circuits 1989
P.F. Lu, J. Ji, et al.
LPED 1996