Reliability and structural design of a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding

Abstract

We demonstrate a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding. Hybrid Cu-oxide hybrid bonding shows excellent bond quality and performances in terms of alignment, bond strength, and ambient permeation oxidation. Excellent performances of initial reliability and quality evaluations for Cu-oxide hybrid bonding are key milestones in proving manufacturability of 3D integration technology. ©2010 IEEE.