The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
- Billy L. Crowder
- 1971
- JES
Publications
509 results at JES
Thermodynamic Analysis of the lll-V Alloy Semiconductor Phase Diagrams: I. InSb-GaSb, InAs-GaAs, and InP-GaP
- L.M. Foster
- J.F. Woods
- 1971
- JES
A Method for the Synthesis of BI3 for Use as a Dopant Source
- M. Berkenblit
- A. Reisman
- 1970
- JES
Negative Surface Charge in Ge MOS Structures
- T.O. Sedgwick
- S. Krongelb
- 1970
- JES
The Solidus Boundary in the GaP-InP Pseudobinary System
- L.M. Foster
- J.E. Scardefield
- 1970
- JES
Epitaxial Growth of GaAsxP1-x from the Liquid Phase
- K.K. Shih
- 1970
- JES
Anomalous Thermal Behavior of Boron-Doped Low-Temperature Ge Epitaxial Layers
- M. Berkenblit
- T.B. Light
- et al.
- 1970
- JES
Effects of Material and Processing Parameters on the Dielectric Strength of Thermally Grown Si02 Films
- N.J. Chou
- J.M. Eldridge
- 1970
- JES
The Role of Damage in the Annealing Characteristics of Ion Implanted Si
- Billy L. Crowder
- 1970
- JES
The Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of Carbonyls
- L.H. Kaplan
- F.M. d'Heurle
- 1970
- JES