Can carbon nanotube transistors be scaled without performance degradation?
- Aaron D. Franklin
- George Tulevski
- et al.
- 2009
- IEDM 2009
Conference paper
Publications
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
Conference paperUEMan: A tool to manage user evaluation in development environments
- Shah Rukh Humayoun
- Yael Dubinsky
- et al.
- 2009
- ICSE 2009
Conference paper1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing
- Siyuranga O. Koswatta
- Steven J. Koester
- et al.
- 2009
- IEDM 2009
Conference paperPhysical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability
- Xiao Zhang
- Jing Li
- et al.
- 2009
- IEDM 2009
Conference paperCompetitive and cost effective high-k based 28nm CMOS technology for low power applications
- F. Arnaud
- A. Thean
- et al.
- 2009
- IEDM 2009
Conference paperHigh performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
- S. Bangsaruntip
- G.M. Cohen
- et al.
- 2009
- IEDM 2009
Conference paperDevelopment of graphene FETs for high frequency electronics
- Yu-Ming Lin
- Keith Jenkins
- et al.
- 2009
- IEDM 2009
Conference paperModular string-sensitive permission analysis with demand-driven precision
- Emmanuel Geay
- Marco Pistoia
- et al.
- 2009
- ICSE 2009
Conference paperUnderstanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Conference paper