High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Conference paper
Publications
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
- Geoffrey W. Burr
- Robert M. Shelby
- et al.
- 2014
- IEDM 2014
Conference paperUnderstanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
Conference paperSDGEN: Mimicking datasets for content generation in storage benchmarks
- Raúl Gracia-Tinedo
- Danny Harnik
- et al.
- 2015
- FAST 2015
Conference paperA tale of two erasure codes in HDFS
- Mingyuan Xia
- Mohit Saxena
- et al.
- 2015
- FAST 2015
Conference paperThrough-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
Conference paperAdvanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- IEDM 2015
Conference paperNovel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
- Huai-Yu Cheng
- W. Chien
- et al.
- 2015
- IEDM 2015
Conference paperNVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- Sangbum Kim
- Masatoshi Ishii
- et al.
- 2015
- IEDM 2015
Conference paperLarge-scale neural networks implemented with non-volatile memory as the synaptic weight element: Comparative performance analysis (accuracy, speed, and power)
- Geoffrey W. Burr
- Pritish Narayanan
- et al.
- 2015
- IEDM 2015
Conference paper