Publications

15 results at IEDM 2019

Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications
- - Ernest Wu
  - Takashi Ando
  - et al.
- 2019
- IEDM 2019
Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors
- - S. Reboh
  - V. Boureau
  - et al.
- 2019
- IEDM 2019
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
- - Guohan Hu
  - D. Kim
  - et al.
- 2019
- IEDM 2019
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
- - John Rozen
  - K. Suu
  - et al.
- 2019
- IEDM 2019
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- - J. Zhang
  - S. Pancharatnam
  - et al.
- 2019
- IEDM 2019