Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory ApplicationsErnest WuTakashi Andoet al.2019IEDM 2019Conference paper
Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet TransitorsS. RebohV. Boureauet al.2019IEDM 2019Conference paper
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applicationsGuohan HuD. Kimet al.2019IEDM 2019Conference paper
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAMJohn RozenK. Suuet al.2019IEDM 2019Conference paper
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance ApplicationsJ. ZhangS. Pancharatnamet al.2019IEDM 2019Conference paper