Mixed Schottky/p-n junction behavior in diodes produced by outdiffusion from polycrystalline cobalt disilicide
- D.P. Foty
- H.I. Hanafi
- et al.
- 1992
- IEDM 1992
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Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992
High transconductance 0.1 μ m pMOSFET
- Y. Taur
- S. Cohen
- et al.
- 1992
- IEDM 1992
AC characterization and modelling of the GexSi1-x/Si BICFET
- M.E. Mierzwinski
- J.D. Plummer
- et al.
- 1992
- IEDM 1992
Monte carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1992
- IEDM 1992
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
- D.J. Frank
- S.E. Laux
- et al.
- 1992
- IEDM 1992
Steady state and pulsed bias stress induced degradation in amorphous silicon thin film transistors for active-matrix liquid crystal displays
- Frank R. Libsch
- 1992
- IEDM 1992
DRAM variable retention time
- P. Restle
- J.W. Park
- et al.
- 1992
- IEDM 1992
203 μa threshold current strained V-groove lasers
- S. Tiwari
- G.D. Pettit
- et al.
- 1992
- IEDM 1992
Development and evaluation of a broad-coverage probabilistic grammar of English-language computer manuals
- Ezra Black
- John Lafferty
- et al.
- 1992
- ACL 1992