Publications

58 results for F. Cardone

High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment
- - Richard A. Kiehl
  - P.E. Hallali
  - et al.
- 1991
- IEEE Electron Device Letters
Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors
- - T.J. De Lyon
  - J. Woodall
  - et al.
- 1991
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)
- - Joachim N. Burghartz
  - Andrew C. Megdanis
  - et al.
- 1991
- IEEE Electron Device Letters
N⁺ doping of gallium arsenide by rapid thermal oxidation of a silicon cap
- - D.K. Sadana
  - J.P. De Souza
  - et al.
- 1990
- Applied Physics Letters
Effect of F co-implant during annealing of Be-implanted GaAs
- - P.E. Hallali
  - H. Baratte
  - et al.
- 1990
- Applied Physics Letters
Annealing behavior of GaAs implanted with Si⁺ and SiF ⁺ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
- - J.P. De Souza
  - D.K. Sadana
  - et al.
- 1990
- Applied Physics Letters
Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs
- - H. Baratte
  - D.K. Sadana
  - et al.
- 1990
- Journal of Applied Physics
Process damage and contamination effects for shallow Si implanted GaAs
- - H. Barratte
  - G. Scilla
  - et al.
- 1989
- ECS Meeting 1989
Passivation of dopants in ion implanted and rapid thermally annealed GaAs in H⁺ plasma environment
- - J.P. de Souza
  - D.K. Sadana
  - et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CH_xl_4-x, HI, and l₂
- - N.I. Buchan
  - T.F. Kuech
  - et al.
- 1990
- Journal of Electronic Materials