Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyondSarunya BangsaruntipK. Balakrishnanet al.2013IEDM 2013
Patterning of CMOS device structures for 40-80nm pitches and beyondSebastian U. EngelmannR.M. Martinet al.2012SPIE Advanced Lithography 2012
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitchMichael A. GuillornJosephine Changet al.2011VLSI Technology 2011
Systematic studies on reactive ion etch-induced deformations of organic underlayersMartin GloddeSebastian Engelmannet al.2011SPIE Advanced Lithography 2011