Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- Annual Proceedings - Reliability Physics (Symposium)
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.