Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
Publications
116 results for Conal Murray
Backscattered electron imaging in the scanning electron microscope: The use of either: (A) high incident energy or (b) an array detector
- L. Gignac
- O.C. Wells
- et al.
- 2008
- Microscopy and Microanalysis
Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures
- Conal E. Murray
- K.L. Saenger
- et al.
- 2008
- Journal of Applied Physics
New simulation methodology for effects of radiation in semiconductor chip structures
- Henry H.K. Tang
- Conal E. Murray
- et al.
- 2008
- IBM J. Res. Dev
Real-space strain mapping of SOI features using microbeam X-ray diffraction
- Conal E. Murray
- S. Polvino
- et al.
- 2008
- Powder Diffraction
Synchrotron microbeam x-ray radiation damage in semiconductor layers
- Sean M. Polvino
- Conal E. Murray
- et al.
- 2008
- Applied Physics Letters
Effects of patterned, stressed SiN overlayers on Si solid phase epitaxy
- K.L. Saenger
- K.E. Fogel
- et al.
- 2008
- Applied Physics Letters
Importance of BEOL modeling in single event effect analysis
- Henry H. K. Tang
- Conal E. Murray
- et al.
- 2007
- IEEE TNS
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
Ni-Pt silicide formation through Ti mediating layers
- Paul Besser
- Christian Lavoie
- et al.
- 2007
- Microelectronic Engineering