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Publication
IWJT 2008
Conference paper
Extendibility of NiPt silicide to the 22-nm node CMOS technology
Abstract
This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1×10-8 Ω-cm2 for both n+ and p+ Si by using novel test structures of small silicided contact with varied areas from 20-nm diameter to 260-nm diameter by e-beam lithography fabricated on highly doped substrate made by conventional source drain implantation. It demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node. ©2008 IEEE.