Conference paper
Multi-bit upsets in 65nm SOI SRAMs
Ethan H. Cannon, Michael S. Gordon, et al.
IRPS 2008
Novel techniques have been developed to simulate particle transport in arbitrarily complex back-end-of-line topologies. They are shown to be critical for single event effect analyses of new device structures for 65 nm CMOS technologies and beyond. The salient features of the new modeling methods are illustrated by the simulation results taken from several case studies of particle-induced radiation problems in the back end. © 2007 IEEE.
Ethan H. Cannon, Michael S. Gordon, et al.
IRPS 2008
Martin Sandberg, Vivekananda P. Adiga, et al.
Applied Physics Letters
Henry H. K. Tang, Conal E. Murray, et al.
IEEE TNS
Conal E. Murray, Robert Rosenberg, et al.
Journal of Applied Physics