About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Synchrotron microbeam x-ray radiation damage in semiconductor layers
Abstract
Radiation induced structural damage is observed in silicon-on-insulator (SOI) and SiGe on SOI samples illuminated with monochromatic (11.2 keV) x-ray microbeams approximately 250 nm in diameter. The x-ray diffraction peaks from the irradiated layers irreversibly degrade with time, indicating permanent structural damage to the crystal lattice. The size of the damaged regions is almost an order of magnitude larger than the beam size. The magnitude of damage decreases as one moves away from the center of the illuminated volume. We discuss the threshold dosage required for damage initiation and possible mechanisms for the observed damage. © 2008 American Institute of Physics.