About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
A new method to determine effective lateral doping abruptness and spreading-resistance components in nanoscale MOSFETs
- Seong-Dong Kim
- Shreesh Narasimha
- et al.
- 2008
- IEEE Transactions on Electron Devices