Reliability challenges for the 10nm node and beyond
- 2014
- IEDM 2014
Publications
Date
Featured collections
Popular topics
46 results for Richard G. Southwick
Hardware Based Performance Assessment of Vertical-Transport Nanosheet Technology
- Gen Tsutsui
- Seunghyun Song
- et al.
- 2022
- IEDM 2022
Frequency-Modulated Charge Pumping: Defect Measurements With High Gate Leakage
- Jason Thomas Ryan
- Richard G. Southwick
- et al.
- 2024
- IEEE Electron Device Letters
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs
- Nilotpal Choudhury
- Tarun Samadder
- et al.
- 2021
- IRPS 2021
TDDB Reliability in Gate-All-Around Nanosheet
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2021
- IRPS 2021
Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- Ruqiang Bao
- K. Watanabe
- et al.
- 2020
- VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2020
- IRPS 2020
Analysis of BTI, SHE Induced BTI and HCD under Full VG/VD Space in GAA Nano-Sheet N and P FETs
- Nilotpal Choudhury
- Uma Sharma
- et al.
- 2020
- IRPS 2020
Channel Strain Dependence of Tinv in Strained Si and Sil-xGexFETs: Internal Strain-induced Modification of Chemical Oxidation
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2019
- VLSI Technology 2019
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- Richard G. Southwick
- Miaomiao Wang
- et al.
- 2019
- VLSI Technology 2019