Publication
IRPS 2020
Conference paper

Analysis of BTI, SHE Induced BTI and HCD under Full VG/VD Space in GAA Nano-Sheet N and P FETs

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Abstract

An ultrafast (10ps delay) characterization method is used to measure threshold voltage shift (ΔVT) owing to Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress in N and P channel Gate All Around (GAA) NSFETs. ΔVT time kinetics at various gate bias (VG) and temperature (T) for BTI and at various VG and drain bias (VD) for HCD is analyzed. Contribution from Self Heat Effect (SHE) induced BTI to overall HCD is estimated under full VG/VD space and pure HCD contribution is determined.

Date

01 Apr 2020

Publication

IRPS 2020

Authors

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