A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
- C.C.-H. Hsu
- D.S. Wen
- et al.
- 1989
- IEDM 1989
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123 results for Tak H. Ning
A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- D.S. Wen
- C.C.-H. Hsu
- et al.
- 1989
- IEDM 1989
23 ps/2.1 mW ECL gate
- Kai-Yap Toh
- C.T. Chuang
- et al.
- 1989
- ISSCC 1989
Sub-50 ps single poly planar bipolar technology
- T.C. Chen
- D.D. Tang
- et al.
- 1988
- IEDM 1988
RELIABILITY ANALYSIS OF SELF-ALIGNED BIPOLAR TRANSISTOR UNDER FORWARD ACTIVE CURRENT STRESS.
- T.C. Chen
- C. Kaya
- et al.
- 1985
- IEDM 1985
ON THE IMPURITY PROFILES OF DOWN SCALED BIPOLAR TRANSISTORS.
- D.D. Tang
- G.P. Li
- et al.
- 1985
- IEDM 1985
SPT CELL - A NEW SUBSTRATE - PLATE TRENCH CELL FOR DRAMS.
- N.C.-C. Lu
- P.E. Cottrell
- et al.
- 1984
- IEDM 1984
High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
Sub-300-ps CBL Circuits
- S.K. Wiedmann
- Tze Chiang Chen
- et al.
- 1989
- IEEE Electron Device Letters
A Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters