Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
- 2016
- VLSI Technology 2016
Publications
This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
16 results for Karthik Balakrishnan
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- 2016
- VLSI Technology 2016
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- 2015
- VLSI Circuits 2015
High-mobility High-Ge-Content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- 2015
- VLSI Technology 2015
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- 2014
- IEDM 2014
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- 2015
- IEDM 2015
Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits
- 2022
- npj Quantum Information
AC device variability in high-κ Metal-Gate CMOS Technology
- 2019
- IEEE Electron Device Letters
High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- 2017
- VLSI-TSA 2017
A statistical critical path monitor in 14nm CMOS
- 2016
- ICCD 2016