L.Å. Ragnarsson, S. Guha, et al.
IEEE Electron Device Letters
Paper
Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
Abstract
The physical and electrical properties of thin layers of AlN were studied in Al-gated MOS capacitors and long channel MOSFETs. It was found that devices with close to ideal hf C-V characteristics can be achieved with growth and anneal temperatures at 650°C. The results showed that the leakage current of the AlN was up to five orders of magnitude lower than for SiO2 of equivalent thickness.
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