Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond
- Xunyuan Zhang
- Huai Huang
- et al.
- 2017
- IITC 2017
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25 results for Mark Raymond
Formation and microstructure of thin Ti silicide films for advanced technologies
- Praneet Adusumilli
- A. Carr
- et al.
- 2016
- IITC/AMC 2016
Tungsten and cobalt metallization: A material study for MOL local interconnects
- Vimal Kamineni
- Mark Raymond
- et al.
- 2016
- IITC/AMC 2016
Analysis of parasitic resistance in double gate FinFETs with different fin lengths
- X. Yang
- Kingsuk Maitra
- et al.
- 2011
- IEEE International SOI Conference 2011
Leakage and contact resistance reduction by diffusion of dopants in NiPt suicide
- Ahmet Ozcan
- Ming Cai
- et al.
- 2011
- ADMETA 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Annealing and impurity effects in co thin films for MOL Contact and BEOL metallization
- James Kelly
- Vimal Kamineni
- et al.
- 2018
- JES
Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study
- Nicholas A. Lanzillo
- H. Dixit
- et al.
- 2018
- Journal of Applied Physics
Extreme-low k porous pSiCOH dielectrics prepared by PECVD
- H. You
- Petra Mennell
- et al.
- 2018
- JVSTB