Modeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- VLSI Technology 1997
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51 results for D.A. Buchanan
Degradation of thin SiO 2 gate oxides by atomic hydrogen
- F. Cartier
- D.J. DiMaria
- et al.
- 1994
- DRC 1994
Measurements of hydrogen redistribution in hot electron injection of MOS capacitors
- A.D. Marwick
- D.A. Buchanan
- et al.
- 1992
- MRS Proceedings 1992
Electron effective mass in ultrathin oxide silicon MOSFET inversion layers
- M. Dragosavac
- D.J. Paul
- et al.
- 2005
- Semiconductor Science and Technology
Interface reactions in ZrO 2 based gate dielectric stacks
- M. Gribelyuk
- A.C. Callegari
- et al.
- 2002
- Journal of Applied Physics
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
- Tiezhong Ma
- Stephen A. Campbell
- et al.
- 2001
- IEEE Transactions on Electron Devices
Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate
- Ryan C. Smith
- Noel Hoilien
- et al.
- 2000
- JES
Scaling the gate dielectric: materials, integration, and reliability
- D.A. Buchanan
- 1999
- IBM J. Res. Dev
Ultrathin nitrided gate dielectrics by plasma-assisted processing
- E. Gusev
- D.A. Buchanan
- et al.
- 1999
- Microelectronic Engineering