E. Cartier, D.A. Buchanan, et al.
Applied Physics Letters
Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide (<40 Å) nMOSFET's is presented, together with experimental verification. An accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitance-versus-voltage curves to quantum-mechanically simulated capacitance-versus-voltage results. The lifetimes of quasibound states and the direct tunneling current are calculated using a transverse-resonant method. These results are used to project an oxide scaling limit of 20 Å before the chip standby power becomes excessive due to tunneling currents.
E. Cartier, D.A. Buchanan, et al.
Applied Physics Letters
D.S. Wen, C.C.-H. Hsu, et al.
IEDM 1989
A.C. Callegari, D.K. Sadana, et al.
Applied Physics Letters
Ryan C. Smith, Noel Hoilien, et al.
JES