Anupam Gupta, Viswanath Nagarajan, et al.
Operations Research
The electrical characteristics (C-V and I-V) of n+ - and p+ -polysilicon-gated ultrathin-oxide capacitors and FETs were studied extensively to determine oxide thickness and to evaluate tunneling current. A quantum-mechanical model was developed to help understand finite inversion layer width, threshold voltage shift, and polysilicon gate depletion effects. It allows a consistent determination of the physical oxide thickness based on an excellent agreement between the measured and modeled C-V curves. With a chip standby power of ≤0.1 W per chip, direct tunneling current can be tolerated down to an oxide thickness of 15-20 angstrom. However, transconductance reduction due to polysilicon depletion and finite inversion layer width effects becomes more severe for thinner oxides. The quantum-mechanical model predicts higher threshold voltage than the classical model, and the difference increases with the electric field strength at the silicon/oxide interface.
Anupam Gupta, Viswanath Nagarajan, et al.
Operations Research
Daniel M. Bikel, Vittorio Castelli
ACL 2008
Raghu Krishnapuram, Krishna Kummamuru
IFSA 2003
S.M. Sadjadi, S. Chen, et al.
TAPIA 2009