O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Light emission from silicon/silicon dioxide/metal tunnel junctions is shown to cover a wide wavelength range from to infrared into the near-ultraviolet. The energy of the emitted light increases with increasing junction bias. This behavior appears to be consistent with calculations for light emission from direct conduction to conduction band transition of the hot electrons after tunneling into the silicon.
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures