Fully-scaled 0.25-micron bipolar technology using variable shaped electron-beam lithography
- Philip J. Coane
- Kaolin G. Chiong
- et al.
- 1993
- Microlithography 1993
Publications
Date
Featured collections
Popular topics
20 results for F.J. Hohn
Fabrication and characterization of compact 100nm scale metal oxide semiconductor field effect transistors
- C. Reeves
- S.J. Wind
- et al.
- 1993
- Microelectronic Engineering
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Lithographic performance of an EL-3 system at 0.25μm groundrules
- T. Newman
- M.G.R. Thomson
- et al.
- 1991
- Microelectronic Engineering
Electron beam lithography-tools and applications
- F.J. Hohn
- 1991
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Resist patterning for sub-quarter-micrometer device fabrications (Invited Paper)
- K. Chiong
- F.J. Hohn
- 1990
- Microlithography 1990
Electron beam lithography, directions in direct write and mask making
- F.J. Hohn
- 1990
- Microlithography 1990
Application of variable shaped electron beam technology to the development of 0.5 micron CMOS technology with extensions to 0.25 micron
- P. Coane
- P. Rudeck
- et al.
- 1989
- Microelectronic Engineering
Fully scaled 0.5μm MOS circuits by synchrotron radiation X-ray lithography: Mask fabrication and chraterization
- R. Viswanathan
- R.E. Acosta
- et al.
- 1989
- Microelectronic Engineering