Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
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15 results for B.J. Ginsberg
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989
Buried-trench DRAM cell using a self-aligned epitaxy over trench technology
- N.C.-C. Lu
- T.V. Rajeevakumar
- et al.
- 1988
- IEDM 1988
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Selective Epitaxy Base Transistor (SEBT)
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- IEEE Electron Device Letters
Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors
- Joachim N. Burghartz
- Jack Y.-C. Sun
- et al.
- 1990
- VLSI Technology 1990
New technology for bipolar emitters in the deep sub-micron range
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1989
- VLSI Technology 1989
Selective epitaxy base for bipolar transistors
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- ESSDERC 1988
DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.
- B.J. Ginsberg
- M. Arienzo
- et al.
- 1983
- ECS Meeting 1983