Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications

Abstract

Unoxidized porous Si was demonstrated as an isolation material for mixed-signal integrated circuit applications. The issues pertinent to incorporating porous Si with Si VLSI technology were also examined. Coplanar waveguide (CPW) line measurements showed that the relative dielectric constant of porous Si films decreases from 9 to 3 with increasing porosity from 24% to 78%.