C. Hayzelden, J.L. Batstone, et al.
Applied Physics Letters
Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed. © 1991 Taylor & Francis Ltd.
C. Hayzelden, J.L. Batstone, et al.
Applied Physics Letters
J.L. Batstone
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Julia M. Phillips, J.C. Hensel, et al.
Journal of Materials Research
J.L. Batstone, M.A. Tischler, et al.
Applied Physics Letters