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Publication
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Paper
Twin intersections in silicon on sapphire
Abstract
Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed. © 1991 Taylor & Francis Ltd.