Tunneling of electrons from Si into thermally grown SiO₂

Abstract

Accurate measurements of electron tunneling at the SiSiO2 interface were performed using the decay of surface potential following charging of the exposed oxide surface by positive corona ions. The surface potential was measured by an automated Kelvin-probe arrangement. Comparison of results for various substrate dopings, crystallographic orientations and oxide film thicknesses is presented. A model for tunneling based on electrons being confined within the lowest subband at the SiSiO2 interface is also discussed and compared to the Fowler-Nordheim expression. © 1977.