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Publication
Applied Physics Letters
Paper
THz spectroscopy and source characterization by optoelectronic interferometry
Abstract
We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye-laser pulses and produces interferograms with exceptional signal-to-noise ratios.