D. Grischkowsky, N.S. Shiren, et al.
Applied Physics Letters
We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye-laser pulses and produces interferograms with exceptional signal-to-noise ratios.
D. Grischkowsky, N.S. Shiren, et al.
Applied Physics Letters
F.E. Doany, D. Grischkowsky
CLEO 1987
D. Grischkowsky, M.M.T. Loy
Applied Physics Letters
R. Sprik, I.N. Duling, et al.
Applied Physics Letters