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Publication
Thin Solid Films
Paper
The chemical vapor deposition of copper and copper alloys
Abstract
The chemical vapor deposition of copper and copper alloys for very large scale integrated interconnects is described using a series of Lewis base stabilized copper (I) 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato (hfac) complexes. When the Lewis base is dimethyl-1,5-cyclooctadiene, high-purity copper metal is deposited at substrate temperatures from 150 to 250 °C. The deposition rate becomes mass-transport limited at the higher substrate temperatures, but excellent filling of sub-micron vias (3:1 aspect ratio) was achieved. The deposition of copper-tin alloys can also be achieved when vinyl trialkyltin is used as the Lewis base. At 180 °C, a carbon-free copper film, containing 0.6 at.%Sn, is deposited. A very strong substrate temperature dependence towards film purity was observed and results from thermal decomposition of the tin-containing ligand. These preliminary results demonstrate the utility of using single-source, mixed-metal precursors for copper alloy formation. © 1995.