Low partial pressures (10-5 to 103 Torr) of tetrafluoromethane have been injected into a dc argon glow discharge (85 x 103 Torr, 1000 V) and the discharge-induced removal rate of the C F4 molecules from the vapor phase has been studied with a mass spectrometer as a function of the discharge current and the CF4 concentration. The ultimate disposition of the CF4 is believed to be in the form of polymeric deposit on the walls of the discharge vessel. The removal rate of CF4 is proportional to the discharge current and also proportional to the concentration of C F4 in the low concentration regime. At higher partial pressures of CF4 (-1 x 103 Torr) the removal rate tends to saturate, becoming independent of the CF4 concentration. © 1976, Taylor & Francis Group, LLC. All rights reserved.