Publication
SISPAD 2018
Conference paper

Technique for Asymmetric Source/Drain Resistance Extraction on a Single Gate Length MOSFET

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Abstract

A simple inline measurement technique for extracting the individual resistance components of the source, drain, and channel on a single MOSFET device using DC measurements is proposed. Modeling data is used to prove the efficacy of the technique. This method can be applied to symmetric or asymmetric devices.

Date

Publication

SISPAD 2018

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